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A solution processable fluorene-benzothiadiazole small molecule for n-type organic field-effect transistors

机译:用于n型有机场效应晶体管的可溶液加工的芴-苯并噻二唑小分子

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摘要

We report an n-type organic semiconductor [2-({7-(9,9-di-n-propyl-9H-fluoren-2-yl}benzo[c][1,2,5] thiadiazol-4-yl) methylene]malononitrile (herein referred to as K12) for use in organic field-effect transistors (OFETs). K12 can be processed by spin-coating from solution or by vacuum deposition, organizing into highly orientated microcrystalline structures at modest (75 degrees C) annealing temperatures. OFETs with n-octyltrichlorosilane or hexamethyldisilazane monolayers, or poly(propylene-co-1-butene) (PPCB) modified dielectric surfaces were prepared. The mobility, ON/OFF ratio, threshold voltage, and current hysteresis were found to be dependent on the thermal history of the film and surface onto which it was deposited. The highest OFET mobility achieved was 2.4 X 10(-3) cm(2)/V s, for spin-coated films with a PPCB modified silicon dioxide dielectric. (C) 2011 American Institute of Physics. [doi:10.1063/1.3569818]
机译:我们报告了一种n型有机半导体[2-({7-(9,9-二-正丙基-9H-芴-2-基}苯并[c] [1,2,5]噻二唑-4-基)用于有机场效应晶体管(OFET)的亚甲基丙二腈(以下简称K12)K12可以通过从溶液中旋涂或通过真空沉积进行加工,并在适当的温度(75摄氏度)下组织成高度取向的微晶结构)制备具有正辛基三氯硅烷或六甲基二硅氮烷单层或聚(丙烯-co-1-丁烯)(PPCB)改性的介电表面的OFET,发现迁移率,ON / OFF比,阈值电压和电流滞后取决于膜及其沉积表面的热历史,对于具有PPCB改性二氧化硅电介质的旋涂膜,获得的最高OFET迁移率是2.4 X 10(-3)cm(2)/ V s (C)2011美国物理研究所[doi:10.1063 / 1.3569818]

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